Integration of Carbon Nanotubes with Semiconductor Technology; Fabrication of Hybrid Devices by III-V Molecular Beam Epitaxy

We review a number of essential issues regarding the integration of carbon nanotubes in semiconductor devices for electronics: Material compatibility, electrical contacts, functionalities, circuit architectures and reliability. In the second part of the paper, we present our own recent results on incorporation of single-wall nanotubes in III-V semiconductor heterostructures grown by molecular beam epitaxy (MBE). We demonstrate that singlewall carbon nanotubes can be overgrown using MBE and electrical contacts to the nanotubes are obtained by GaMnAs grown at 250◦C. The resulting devices can exhibit field effect action at room temperature. PACS numbers: 72.80.Ey, 73.63.Fg, 85.65.+h Submitted to: Semicond. Sci. Technol. ‡ Present address: COM•DTU, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark Integration of Carbon Nanotubes with Semiconductor Technology 2